Nowadays “laser diodes, LED’s, optical waveguides, directional couplers and photodetectors are widely used in telecommunication, for biomedical applications, pollution monitoring tools etc”. Lasers can be designed by using various semiconductor materials by changing their composition. In our work we have designed a nano scale heterostructure using semiconductor compounds GaInP/AlGaInP for generating a wavelength of 635nm having optical gain of order ~4000/cm at carrier injection of 5*1012/cm2 at room temperature. The calculation of wavefunctions, dipole moments and optical gain are done by using Luttinger Kohn 4*4 model. The optical gain computed for Ga0.46In0.54P/Al0.25Ga0.27In0.48P type-I quantum well heterostructure (varying well width 3nm-7nm) is further analyzed for external strain applied and at different temperatures in order to make the laser more suitable to be used for different purposes. “The effect of uniaxial strain [001] applied shows significant improvement in optical gain under z polarization whereas x and y polarizations are less effected by applied strain”. The designed heterostructure is analyzed under different temperature conditions for below and above room temperature. The reported results show that the designed laser can be used for a range of 600-650nm wavelength.

Heterostructure, optical gain, uniaxial strain, Luttinger Kohn model