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Bimonthly Since 1986 |
ISSN 1004-9037
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Publication Details |
Edited by: Editorial Board of Journal of Data Acquisition and Processing
P.O. Box 2704, Beijing 100190, P.R. China
Sponsored by: Institute of Computing Technology, CAS & China Computer Federation
Undertaken by: Institute of Computing Technology, CAS
Published by: SCIENCE PRESS, BEIJING, CHINA
Distributed by:
China: All Local Post Offices
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05 July-September 2023, Volume 38 Issue 4
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Abstract
Crystalline, microcrystalline and amorphous silicon have been playing a very important role in many aspects of fundamental and applied research fields as a result of the well-established and relatively cheap technology of this semiconductor element. However, with an energy gap of 1.1 eV, silicon remained up till recently unapplied into optoelectronics, which was reserved to compound semiconductor technologies of which are relatively difficult and, usually, very costly. The discovery of the visible electroluminescent phenomenon in porous silicon (PS) even at room temperature stimulated a great deal of interest. With an energy gap of 0.5 eV greater than its crystalline counterpart, this semiconductor opened up many other application fields such as opto, micro, and nano-electronics. The chapter describes the theoretical calculation of optical properties of porous silicon and polymers treated porous silicon. The Optical properties of porous silicon and polymers treated porous silicon were also depending upon the porosity. It is concluded that the theoretical calculation is a simple way to confirm the experimental results.
Keyword
Porous Silicon (PS), Polymers treated porous silicon, Optical Properties, Etching time, PMMA & PVC Concentrations
PDF Download (click here)
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