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| Bimonthly Since 1986 |
ISSN 1004-9037
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| Publication Details |
Edited by: Editorial Board of Journal of Data Acquisition and Processing
P.O. Box 2704, Beijing 100190, P.R. China
Sponsored by: Institute of Computing Technology, CAS & China Computer Federation
Undertaken by: Institute of Computing Technology, CAS
Published by: SCIENCE PRESS, BEIJING, CHINA
Distributed by:
China: All Local Post Offices
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Abstract
The morphological and optical bandgap ofAl2O3 dopped SnO2 Nano materials of metal oxides are studied here. The subjected nano composites nano particles of metaloxides were synthesized using chemical route method i.e., microwave assisted chemical co-precipitation method. The synthesized samples were characterized by the methods of X-Ray Diffraction, FTIR Spectroscopy and UV-VIS Spectroscopy for the morphological and optical characteristics of the samples. The result suggests that samples are of nano size and are wide bandgap semiconductors in nature. The X-Rays Spectrum a, UV-Visible Spectrum and Tauc Plots of the samples results were analyzed and size, absorption peaks and band gaps of the samples were calculated and compared. The comparative study suggests the applications of the samples as per their properties of wide band gap semiconductors behavior.
Keyword
BandGap, Wide BandGap, Nano-Materials, Nano-Composites,
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